Rurbanisation denotes to the rural area being urbanized,Precisely rural area with the characteristic features of facilities available in area. These include Education School , Health PHC , Pucca raod to the village, Electrification of the village and
Full description
living things
Characteristics of Droughts in Bangladesh
assignmenFull description
LTD Part Discussions
Consumer Behavior CharacteristicsFull description
managementFull description
Characteristics of Victorian LiteratureFull description
Full description
CHARACTERISTICS OF ARCHAEBACTERIA.pdfFull description
SUPERSONIC WIND TUNNEL DESIGN
Travel through the beautiful and scenic literature of the Greeks. Get to know then betterFull description
Full description
By Shaykh al-Islam Ibn al-Qayyim al-Jawziyyah with an appendix from the work of ash-Shanqiti. In the Qur’an, Allah has revealed the machinations of the hypocrites, He has unveiled their beliefs, th...Full description
Laboratory 5: Device characteristics of nMOSFET Group -5 Group Member – Vikram Palial !"#$%5#&
Determine Determine the threshol2 volta4e !Vth& Plot 32 !2rain c(rrent& vs V2s ! at 2i6erent 7ate Volta4e& Determine Determine the sat(ration volta4e !V28sat& an2 transcon2(ctance 9arameter of the MOSFET
Theory – The metal1oi2e1semicon2(ctor ;el2 is ty9e of 2evice (se2 for am9lifyin4 or sitchin4 electronic si4nals Mosfet is a semicon2(ctor 2evice ith fo(r terminal !7ate8 So(rce8 Drain an2 S(bstrate& The 2rain an2 so(rce terminals terminals are connecte2 to the heavily 2o9e2 re4ions The 4ate terminal is connecte2 to9 on the oi2e layer an2 the s(bstrate or bo2y terminal is connecte2 to the intrinsic semicon2(ctor semicon2(ctor The Symbols an2 basic constr(ction for nMosfet is Shon belo 1
MOSFET has fo(r terminals hich is alrea2y state2 above8 they are 4ate8 so(rce 2rain an2 s(bstrate or bo2y MOS ca9acity 9resent in the 2evice is the main 9art The con2(ction an2 valance ban2s are 9osition relative to the Fermi level at the s(rface is a f(nction of MOS volta4e The metal of the 4ate terminal an2 the sc acts the 9arallel an2 the oi2e layer acts as ins(lator of the state MOS ca9acitor "eteen the 2rain an2 so(rce terminal inversion layer is forme2 an2 2(e to the
The fo(r MOSFET symbols above sho an a22itional terminal calle2 the S(bstrate an2 is not normally (se2 as either an in9(t or an o(t9(t connection b(t instea2 it is (se2 for 4ro(n2in4 the s(bstrate 3t connects to the main semicon2(ctive channel thro(4h a 2io2e 0(nction to the bo2y or metal tab of the MOSFET =orkin4 of a nMosfet1 The 2rain an2 so(rce are heavily 2o9e2 n> re4ion an2 the s(bstrate is 91ty9e The c(rrent
atoms The 9ositive 4ate volta4e also attracts electrons from n> so(rce an2 2rain re4ion in to the channel th(s an electron reach channel is forme28 no if a volta4e is a99lie2 beteen the so(rce an2 2rain The 4ate volta4e controls the electron concentration in the channel n1channel MOSFET is 9referre2 over 91channel MOSFET as the mobility of electrons are hi4her than holes Threshol2 Volta4e of a mosfet1 The threshol2 volta4e !Vth or V7S !th&&8 of a Mosfet is the minim(m 4ate1to1so(rce volta4e 2i6erential that is nee2e2 to create a con2(ctin4 9ath beteen the so(rce an2 2rain terminals
MOSFETs have the ability to o9erate ithin three 2i6erent re4ions: •
1. Cut-of Region – ith V7S @ Vthreshol2 the 4ate1so(rce volta4e is loer than the threshol2 volta4e so the MOSFET transistor is sitche2 Af(lly1OFFB an2 3DS C %8 the transistor acts as an o9en circ(it
•
2. Linear (Ohmic) Region – ith V7S Vthreshol2 an2 VDS V7S the transistor is in its constant resistance re4ion an2 acts like a variable resistor hose val(e is 2etermine2 by the 4ate volta4e8 V7S
3. Saturation Region – ith V7S Vthreshol2 the transistor is in its
•
constant
c(rrent
re4ion
an2
is
sitche2
Af(lly1OB
The
c(rrent 3DS C maim(m as the transistor acts as a close2 circ(it
Sat(ration Volta4e of a Mosfet1
ith V7S Vthreshol2 the transistor is
in its constant c(rrent re4ion8 minim(m Drain Volta4e hich sitch mosfet to sat(ration re4ion from active re4ion 3t is re(ire2 to 2o am9li;cation !beca(se am9li;cation ork at sat(ration re4ion&
Sat(ration Volta4e is 2i6erent for 2i6erent 7ate Volta4e!V7S Vthreshol2 &
Transcon2(ctance 9ro9erty of a Mosfet1 Transcon2(ctance is the ratio of the c(rrent variation at the o(t9(t to the
volta4e
at
the
in9(t
=e can ;n2 o(t transcon2(ctance (sin4 slo9e of 2rain c(rrent vs 4ate volta4e
E9eriment Girc(it1 1 1 1 1
=e (se 3'F5$% nMosfet for the e9eriment =e connect a resistance of //k val(e to 2rain to meas(re Drain G(rrent =e can connect a resistance to 4ate !b(t e 2i2n?t & =e (se F(nction 7enerator an2 s(99ly to 4ive in9(t in Mosfet?s Drain an2 So(rce 9in
o to ;n2 o(t Threshol2 Volta4e e ;e2 the Drain Volta4e an2 Vary the 4ate volta4e an2 see hich 4ate volta4e e 4ate Drain c(rrent
Vd 2v 2.5v 3v So =e 4et Threshol2 volta4e V TC$*v
VT $*v $*v $*v
o to see 31V characteristic of a Mosfet e sho(l2 4ive 7ate Volta4e !Threshol2 Volta4e& so e took 4ate volta4e !$*v&
o from above 2ata an2 9lot e can say that e have 2i6erent sat(ration volta4e for 2i6erent a99lie2 7ate volta4e –
Vgate 3v 3.2v 3.4v
Vsat %/v %-v #*v
From above 9lot e can ;n2 o(t the transcon2(ctance val(e C%%%-5 !ohm&1#
Goncl(sion1 1 =e nee2 a 7ate volta4e ! Threshol2 volta4e& to chan4e the Mosfet to active re4ion from c(t1o6 re4ion 1 31V characteristic shos that ;rst mosfet ork in linear re4ion !active re4ion& an2 then reach sat(ration 1 For Di6erent 7ate volta4e e 4et 2i6erent Sat(ration volta4e