MCQ Q: In the following problems, indicate your answer by giving the lette r of the statement you consider correct. 1- An integrated electronic circuit is (a) A complicated circuit. (b) An integrated device. (c) Fabricated only on a tiny silicon chip. (d) Much costlier than a single transistor 2- The silicon wafer thickness varies from (a) 0.4 to 1.0 mm. (b) 0.6 to 0.8 mm. (c) 0.6 to 0.8 cm. (d) 1.2 to 2 mm. 3- In the thin film circuits. (a) Active components are diffused into the substrate. (b) Components are formed by silk-screen circuits. (c) Active components are not used. (d) Passive components are formed on the surface of the substrate by evaporation. 4- In the context of IC fabrication, metallization means. (a) Connecting metallic wires. (b) Covering with a metallic cap. (c) forming interconnecting conduction pattern and bonding pads. (d) Depositing SiO2 layer. 5- The foundation on which an IC is built is called an (a) Insulator (b) Base (c) Plate (d) Wafer 6- As compared to monolithic ICS, film IC S have the advantage of (a) Better high frequency response. (b) Much reduced cost. (c) Smaller size. (d) Less flexibility in circuit design 7- Epitaxial growth is used in IC S (a) To grow selectively single-crystal p-doped silicon of one resistively on p-type substrate of a different resistivity. (b)
To grow single-crystal n-doped silicon on a single-crystal p-doped on p-type substrate.
(c) Because it yields back-to-back isolating p-n junctions. (d) Because it produces low parasitic capacitance. 8- A multichip circuit. (a) Consists of several interconnecting thin film circuits. (b) Is a monolithic silicon wafer with thick film techniques
(c) Is normally made with thick film techniques (d) Is formed either by inter-connecting a number of individual chips or by a combination of film and monolithic IC techniques. 9- The photo masking. (a) Provides control of the regions of t he silicon oxide to be etched (b) Control the depth of diffusion (c) Reduces component size (d) Prevents ambient light from shining on the silicon wafer during processing 10- The sheet resistance of a semiconductor is (a) An undesirable parasitic element (b) An important characteristic of a diffused region, especially when used to form diffused resistors. (c) A characteristic whose value determines the required area for a given value of integrate capacitance. (d) A parameter whose value is important in a thin –film resistance. 11- Increasing the yield of an integrated c ircuit (a) Reduces individual circuit cost (b) Increases the cost of each good circuit. (c) Results in a lower number of good chips per wafer. (d) Means that more transistors can be fabricated on the same size wafer. 12- Monolithic integrated circuit systems offer greater r eliability than discrete component system because (a) There are fewer interconnections. (b) High-temperature metalizing is used. (c) Electric voltages are low. (d) Electric elements are closely matched. 13- Almost all resistors are made in a m onolithic IC (a) During the emitter diffusion. (b) While growing the epitaxial layer. (c) During the base diffusion. (d) During the collector diffusion. 14- In a monolithic-type IC (a) All isolation problems are eliminated. (b) Resistors and capacitors of any value may be made. (c) All components are eliminated. (d) Each transistor is diffused into a separate isolation region. 15- The main purpose of the metallization process is (a) To interconnect the various circuit elements. (b) To protect the chip from oxidation. (c) To act as a heat sink. (d) To supply a bonding surface for mounting the chip.
